基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硒化錸

簡(jiǎn)要描述：This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet.

更新時(shí)間：2024-06-03
產(chǎn)品型號(hào)：
廠商性質(zhì)：生產(chǎn)廠家
訪問(wèn) 量：1070

產(chǎn)品咨詢聯(lián)系我們

產(chǎn)品分類

二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

相關(guān)文章

詳細(xì)介紹

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.45 eV Anisotropic Semiconductor (Indirect Bandgap)
Crystal structure	Distorted Tetragonal Phase (1T’)
Unit cell parameters	a = 0.656 nm, b = 0.672 nm, c = 0.674 nm, α = 91.74°, β = 105°, γ = 119°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

Specifications

1) Identification. Full coverage 100% monolayer ReSe2 uniformly covered across c-cut sapphire

2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4) Uniformity. Highly uniform surface morphology. ReSe2 monolayers uniformly cover across the sample.

5) Purity. 99.9995% purity as determined by nano-SIMS measurements

6) Reliability. Repeatable Raman and photoluminescence response

7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) Substrate. c-cut Sapphire but our research and development team can transfer ReSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

Defect profile. ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using α-bombardment technique.

Supporting datasets [for 100% Full area ReSe2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropy

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReSe2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show band gap at 1.45 eV for monolayer ReS2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect band nature.

產(chǎn)品咨詢

留言框

產(chǎn)品：
您的單位：
您的姓名：
聯(lián)系電話：
常用郵箱：
省份：
詳細(xì)地址：
補(bǔ)充說(shuō)明：
驗(yàn)證碼：

請(qǐng)輸入計(jì)算結(jié)果（填寫(xiě)阿拉伯?dāng)?shù)字），如：三加四=7

上一篇：基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硫化錫
下一篇：基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硫化錸

基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硒化錸

留言框

產(chǎn)品：

您的單位：

您的姓名：

聯(lián)系電話：

常用郵箱：

省份：

詳細(xì)地址：

補(bǔ)充說(shuō)明：

驗(yàn)證碼：